Noticias
Tendencia

Mercado de dispositivos de semiconductores de GaN 2020 Perspectivas globales y escenario comercial: conversión de energía eficiente, Toshiba, Cree, NXP Semiconductors, Texas Instruments

El informe de mercado Dispositivo semiconductor de GaN es una compilación de información de primera mano, evaluación cualitativa y cuantitativa de analistas de la industria, aportaciones de expertos de la industria y participantes de la industria en toda la cadena de valor. El informe proporciona un análisis en profundidad de las tendencias del mercado principal, los indicadores macroeconómicos y los factores rectores junto con el atractivo del mercado según los segmentos. El informe también mapea el impacto cualitativo de varios factores de mercado en segmentos de mercado y geografías. Se analizó el impacto de COVID-19 (Virus Corona) en la cadena de la industria de productos con base en los mercados upstream y downstream, en varias regiones y países importantes y en el desarrollo futuro de la industria.

GaN pertenece a esta categoría de semiconductores, particularmente adecuados para aplicaciones de energía debido a sus características superiores en comparación con el silicio: específicamente, su capacidad para cambiar internamente más rápido cuando se opera a la misma frecuencia de operación que Si o SiC. , pérdidas de conmutación internas más bajas debido a su movilidad de electrones superior que es 2 veces mayor, frecuencias de operación más altas debido a sus inductancias parásitas más bajas, especialmente en topologías de conmutación suave, voltaje de trabajo más alto para un tamaño dado de matriz en función de su mayor intensidad de campo eléctrico crítico (3.3 MV / cm) frente a 0,3 MV / cm con silicio, lo que resulta en una mayor eficiencia. Debido a sus propiedades químico-físicas y a los procesos de fabricación altamente confiables, el silicio ha sido durante muchos años el semiconductor más utilizado para la fabricación de componentes electrónicos pasivos y activos.

Obtenga una copia de muestra de este informe:

https://www.marketinsightsreports.com/reports/10082335487/global-gan-semiconductor-device-market-research-report-with-opportunities-and-strategies-to-boost-growth-covid-19-impact-and- recuperación / consulta? Mode = 12 & Source = Releasewire

Las principales  empresas líderes del mercado global de dispositivos de semiconductores de GaN son  Conversión de energía eficiente, Toshiba, Cree, NXP Semiconductors, Texas Instruments, NTT Advanced Technology, Infineon Technologies, OSRAM, Panasonic, GaN Systems y otros .

Noticias y actualizaciones de la industria:

STMicroelectronics y TSMC colaboran para acelerar la adopción en el mercado de productos a base de nitruro de galio

Ginebra, Suiza y Hsinchu, Taiwán, República de China, 20 de febrero de 2020: STMicroelectronics (NYSE: STM), líder mundial en semiconductores que atiende a clientes de todo el espectro de aplicaciones electrónicas, y TSMC (TWSE: 2330, NYSE: TSM), la empresa dedicada más grande del mundo fundición de semiconductores, están colaborando para acelerar el desarrollo de la tecnología de proceso de nitruro de galio (GaN) y el suministro de dispositivos de GaN tanto discretos como integrados al mercado. A través de esta colaboración, los productos GaN innovadores y estratégicos de ST se fabricarán utilizando la tecnología de proceso GaN líder de TSMC.

GaN is a wide bandgap semiconductor material which offers significant benefits over traditional Silicon-based semiconductors for power applications. These benefits include greater energy efficiency at higher power, leading to a substantial reduction in parasitic power losses. GaN technology also allows the design of more compact devices for better form factors. Additionally, GaN-based devices switch at speeds as much as 10X faster than Silicon-based devices while operating at higher peak temperatures. These robust and intrinsic material characteristics make GaN ideally suited for broad-based adoption in evolving automotive, industrial, telecom, and specific consumer applications across both the 100V and the 650V clusters.

Specifically, Power GaN and GaN IC technology-based products will enable ST to provide solutions for medium and high-power applications with better efficiency compared to silicon technologies on the same topologies, including automotive converters and chargers for hybrid and electric vehicles. Power GaN and GaN IC technologies will help accelerate the megatrend of the electrification of consumer and commercial vehicles.

Toshiba’s Cascode GaN Discrete Power Device Realize Stable Operation and Simplifies System Design with Direct Gate Drive

September 30, 2020 – TOKYO–Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed a gallium nitride (GaN) cascode with a direct gate drive that realizes stable operation and simplification of system design. The device reduces risk of additional energy loss during switching due to false on, and like silicon its switching speed can be easily adjusted, an important consideration in the design of power electronics systems. Details of the new discrete device were reported at the IEEE-sponsored International Symposium on Power Semiconductor Devices and ICs 2020 (ISPSD 2020), held online.

GaN power devices are candidates for achieving high efficiency and downsizing systems. They are currently used in quick chargers for smartphones and computers, and are expected to be adopted in the power supply of industrial equipment and servers. Generally, power devices need to be normally-off, but GaN high-electron-mobility transistors (HEMTs) are normally-on. GaN transistors used for power conversion can be classified into cascode and p-GaN gate types. The cascode type is combined with a GaN HEMT and low voltage silicon MOSFET in a single package. The p-GaN gate type uses a p-GaN gate to make GaN HEMTs normally-off.

Toshiba’s new GaN cascode is less susceptible to noise, a source of malfunction, as it has a higher threshold voltage than p-GaN gate normally-off HEMT devices. It also does not require designated driver ICs.

On The Basis Of Product, The GaN Semiconductor Device Market Is Primarily Split Into

Power Semiconductors
Opto Semiconductors
RF Semiconductors

On The Basis Of End Users/Application, This Report Covers

Automotive
Consumer Electronics
Aerospace & Defense
Healthcare
Information & Communication Technology

This report focuses on GaN Semiconductor Device volume and value at the global level, regional level and company level. From a global perspective, this report represents overall GaN Semiconductor Device market size by analyzing historical data and future prospect. Regionally, this report focuses on several key regions: North America, Europe, China and Japan etc.

This allows understanding of the market and benefits from any lucrative opportunities that are available. Researchers have offered a comprehensive study of the existing market scenario while concentrating on the new business objectives. There is a detailed analysis of the change in customer requirements, customer preferences, and the vendor landscape of the overall market.

Furthermore, this study will help our clients solve the following issues:

Cyclical dynamics – We foresee dynamics of industries by using core analytical and unconventional market research approaches. Our clients use insights provided by us to maneuver themselves through market uncertainties and interferences.

Identifying key cannibalizes – Strong substitute of a product or service is the most important threat. Our clients can identify key cannibalizes of a market, by procuring our research. This helps them in aligning their new product development/launch strategies in advance.

Spotting emerging trends – The report help clients to spot upcoming hot market trends. We also track possible impact and disruptions which a market would witness by a particular emerging trend. Our proactive analysis helps clients to have early mover advantage.

Interrelated opportunities – This report will allow clients to make decisions based on data, thereby increasing the chances that the strategies will perform better if not best in real world.

Browse Full Report at:

https://www.marketinsightsreports.com/reports/10082335487/global-gan-semiconductor-device-market-research-report-with-opportunities-and-strategies-to-boost-growth-covid-19-impact-and-recovery?Mode=12&Source=Releasewire

Following are major Table of Content of GaN Semiconductor Device Industry:

  • GaN Semiconductor Device Market Sales Overview.
  • GaN Semiconductor Device Market Sales Competition by Manufacturers.
  • GaN Semiconductor Device Market Sales Analysis by Region.
  • GaN Semiconductor Device Market Sales Analysis by Type.
  • GaN Semiconductor Device Market Analysis by Application.
  • GaN Semiconductor Device Market -Manufacturers Analysis.

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